BFR840L3RHESD Datasheet, PDF (22/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFR840L3RHESD
Electrical Characteristics
36
33
30
0.9GHz
27
1.5GHz
1.9GHz
2.4GHz
24
3.5GHz
21
18
5.5GHz
15
12
10.0GHz
9
12.0GHz
6
0 5 10 15 20 25 30 35 40 45
I [mA]
C
Figure 5-13 Maximum Power Gain G_max = f (I_C), V_CE = 1.8 V, f = Parameter in GHz
36
33
30
0.9GHz
27
1.5GHz
1.9GHz
24
2.4GHz
3.5GHz
21
5.5GHz
18
10.0GHz
15
12.0GHz
12
9
6
0
0.5
1
1.5
2
2.5
V [V]
CE
Figure 5-14 Maximum Power Gain G_max = f (V_CE), I_C = 10 mA, f= Parameter in GHz
Data Sheet
22
Revision 1.2, 2013-04-09