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BFR840L3RHESD Datasheet, PDF (17/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor
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BFR840L3RHESD
Electrical Characteristics
102
101
100
10−1
10−2
10−3
10−4
10−5
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V
100
10−1
10−2
10−3
10−4
10−5
10−6
10−7
0.5
0.6
0.7
0.8
0.9
V [V]
BE
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V
Data Sheet
17
Revision 1.2, 2013-04-09
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