BFR840L3RHESD Datasheet, PDF (13/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFR840L3RHESD
Electrical Characteristics
Table 5-4 AC Characteristics, V_CE = 1.8 V, f = 0.9 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ms
–
|S₂₁|²
–
29
–
26.5 –
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
0.55 –
26
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP3 –
4
–
18.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 10 mA
I_C = 10 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 10 mA
I_C = 10 mA
Table 5-5 AC Characteristics, V_CE = 1.8 V, f = 1.5 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ms
–
|S₂₁|²
–
27
–
25.5 –
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
0.55 –
24.5 –
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP3 –
4
–
17
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 10 mA
I_C = 10 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 10 mA
I_C = 10 mA
Table 5-6 AC Characteristics, V_CE = 1.8 V, f = 1.9 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power gain
Maximum power gain
Transducer gain
Minimum Noise Figure
G_ms
–
|S₂₁|²
–
26.5 –
25
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
0.60 –
24
–
1 dB compression point at output
3rd order intercept point at output
OP_1dB
–
OIP3 –
4
–
17
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 10 mA
I_C = 10 mA
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 10 mA
I_C = 10 mA
Data Sheet
13
Revision 1.2, 2013-04-09