BFR840L3RHESD Datasheet, PDF (16/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

5.4
Characteristic DC Diagrams
BFR840L3RHESD
Electrical Characteristics
18
16
I_B = 70µA
14
I_B = 60µA
I = 50µA
B
12
I_B = 40µA
10
8
I_B = 30µA
6
I_B = 20µA
4
I_B = 10µA
2
0
0
0.5
1
1.5
2
2.5
3
V [V]
CE
Figure 5-2 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter
10³
10²
10^−2
10^−1
10⁰
10¹
I [mA]
C
Figure 5-3 DC Current Gain h_FE = f (I_C), V_CE = 1.8 V
Data Sheet
16
10²
Revision 1.2, 2013-04-09