BFR840L3RHESD Datasheet, PDF (10/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

4
Thermal Characteristics
BFR840L3RHESD
Thermal Characteristics
Table 4-1 Thermal Resistance
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Junction - soldering point¹⁾
R_thJS
–
521
–
K/W –
1) For the definition of R_thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
80
70
60
50
40
30
20
10
0
0
50
100
150
T_S [°C]
Figure 4-1 Total Power Dissipation P_tot = f (T_S)
Data Sheet
10
Revision 1.2, 2013-04-09