IC42S16102 Datasheet, PDF (5/78 Pages) Integrated Circuit Solution Inc – 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

IC42S16102
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
VCC MAX
VCCQ MAX
VIN
VOUT
PD MAX
ICS
TOPR
TSTG
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
Rating
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
1
50
0 to +70
–55 to +150
Unit
V
V
V
V
W
mA
°C
°C
DC RECOMMENDED OPERATING CONDITIONS⁽²⁾ (At TA = 0 to +70°C)
Symbol
VCC, VCCQ
VIH
VIL
Parameter
Supply Voltage
Input High Voltage⁽³⁾
Input Low Voltage⁽⁴⁾
Min.
3.0
2.0
-0.3
Typ.
Max.
Unit
3.3
3.6
V
—
VDD + 0.3
V
—
+0.8
V
CAPACITANCE CHARACTERISTICS^(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol Parameter
Typ. Max. Unit
CIN1
CIN2
CI/O
Input Capacitance: A0-A11
—
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM) —
Data Input/Output Capacitance: I/O0-I/O15
—
4
pF
4
pF
5
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. All voltages are referenced to GND.
3. VIH (max) = VCCQ + 2.0V with a pulse width ≤ 3 ns.
4. VIL (min) = GND – 2.0V with a pulse < 3 ns and -1.5V with a pulse < 5ns.
Integrated Circuit Solution Inc.
5
DR042-0A 01/18/2005