IC42S16102 Datasheet, PDF (26/78 Pages) Integrated Circuit Solution Inc – 512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

IC42S16102
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in the
precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (tDAL) between the
last burst data input and the completion of the precharge
operation differs depending on the CAS latency setting.
The delay (tDAL) is tRP plus one CLK period. That is, the
precharge operation starts one clock period after the last
burst data input.
Therefore, the selected bank can be made active after a
delay of tDAL.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
CAS Latency
tDAL
3
1CLK
+tRP
2
1CLK
+tRP
CLK
COMMAND
READA 0
ACT 0
I/O
DOUT 0
DOUT 1 DOUT 2 DOUT 3
READ WITH AUTO-PRECHARGE
(BANK 0)
PRECHARGE START
(tPQL=0)
tRP
CAS laten^Cc^Ly ^K= 2, burst length = 4
COMMAND
READA 0
I/O
READ WITH AUTO-PRECHARGE
(BANK 0)
DOUT 0
DOUT 1
tPQL
DOUT 2 DOUT 3
ACT 0
PRECHARGE START
tRP
CLK
COMMAND
READA 0
I/O
READ WITH AUTO-PRECHARGE
(BANK 0)
CAS latency = 3, burst length = 4
DOUT 0
DOUT 1
tPQL
DOUT 2
DOUT 3
PRECHARGE START
tRP
ACT 0
26
Integrated Circuit Solution Inc.
DR042-0A 01/18/2005