GMS81508A Datasheet, PDF (90/91 Pages) Hynix Semiconductor – USERS MANUAL

HYUNDAI MicroElectronics
GMS81516AT EPROM PROGRAMMING
AC READING CHARACTERISTICS
(V_SS=0 V, T_A = 25°C ± 5°C)
Symbol
tAS
tO E
tD H
NOTES:
Item
Address setup time
Data output delay time
Data hold time
Min
Typ
Max
2
200
0
1. VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
Unit
us
ns
ns
Test condition
AC PROGRAMMING CHARACTERISTICS
(V_SS=0 V, T_A = 25°C ± 5°C; See DC Characteristics Table for V_{D D} and V_PP voltages.)
Symbol
Item
Min
tAS
Address set-up time
2
tOES
OE set-up time
2
tDS
Data setup time
2
tAH
Address hold time
0
tD H
Data hold time
1
tDFP
Output disable delay time
0
tVPS
VPP setup time
2
tV D S
VDD setup time
2
tPW
Program pulse width
0.95
tO P W
CE pulse width when over
programming
2.85
tO E
Data output delay time
*AC CONDITIONS OF TEST
Input Rise and Fall Times (10% to 90%) . . . . 20 ns
Input Pulse Levels . . . . . . . . . . . . . . . 0.45V to 4.55V
Input Timing Reference Level . . . . . . . . . 1.0V to 4.0V
Output Timing Reference Level . . . . . . . . 1.0V to 4.0V
Typ
1.0
Max
1.05
78.75
200
Unit
us
us
us
us
us
us
us
us
ms
Condition*
(Note 1)
Intelligent
ms (Note 2)
ns
NOTES:
1. VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
2. The length of the overprogram pulse may vary from 2.85 msec to 78.75 msec as a function of the iteration counter value X
Refer to page 13.
12