GMS81508A Datasheet, PDF (87/91 Pages) Hynix Semiconductor – USERS MANUAL

GMS81516AT EPROM PROGRAMMING
HYUNDAI MicroElectronics
DEVICE OPERATION MODE
(T_A = 25°C ± 5°C)
Mode
CE
OE
A0~A15
VPP
Read
X
X
VDD
Output Disable
VIH
VIH
X
VDD
Programming
VIL
VIH
X
VPP
Program Verify
X
X
VPP
NOTES:
1. X = Either VIL or VIH
2. See DC Characteristics Table for VDD and VPP voltages during programming.
VDD
5.0V
5.0V
VDD
VDD
O0~O7
DOUT
Hi-Z
DIN
DOUT
DC CHARACTERISTICS
(V_SS=0 V, T_A = 25°C ± 5°C)
Symbol
VPP
VDD(1)
IPP ⁽²⁾
IDD ⁽²⁾
VIH
V IL
VOH
VOL
IIL
NOTES:
Item
Intelligent Programming
Intelligent Programming
VPP supply current
VDD supply current
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Min
Typ
Max
Unit
12.0
-
13.0
V
5.75
-
6.25
V
50
mA
30
mA
0.8 VDD
V
0.2 VDD
V
VDD-1.0
V
0.4
V
5
uA
1. VDD must be applied simultaneously or before VPP and removed simultaneously or after VPP.
2. The maximum current value is with outputs O0 to O7 unloaded.
Test condition
CE=VIL
IOH = -2.5 mA
IOL = 2.1 mA
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