HY29LV320 Datasheet, PDF (40/44 Pages) Hynix Semiconductor – 32 Mbit (2M x 16) Low Voltage Flash Memory

HY29LV320
AC CHARACTERISTICS
Addresses
WE#
OE#
CE#
Data
RY/BY#
RESET#
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
VA
t_WC
t_AS
t_AH
t_GHEL
t_{W H}
t_WS
t_CP
t_CPH
t_WHWH1 or t_WHWH2 or t_WHWH3
t_DS
t_DH
t_BUSY
0xA0 for Program
0x55 for Erase
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
Status
t_RH
D _OUT
Notes:
1. PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write
Operation Status section), D = array data read at VA.
OUT
2. Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
3. RESET# shown only to illustrate t measurement references. It cannot occur as shown during a valid command
RH
sequence.
Figure 27. Alternate CE# Controlled Write Operation Timings
40
r1.3/May 02