HY29LV320 Datasheet, PDF(11/44 Page) Hynix Semiconductor – 32 Mbit (2M x 16) Low Voltage Flash Memory

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HY29LV320 Datasheet, PDF (11/44 Pages) Hynix Semiconductor – 32 Mbit (2M x 16) Low Voltage Flash Memory

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HY29LV320

WE#

OE#

ADR

CE#

OE#

DATA OUT

tACC

tCE

tOE

Figure 1. Read Operation

Write Operation

Certain operations, including programming data

and erasing sectors of memory, require the host

to write a command or command sequence to the

HY29LV320. Writes to the device are performed

by placing the word address on the deviceâs ad-

dress inputs while the data to be written is input

on DQ[15:0]. The host system must drive the CE#

and WE# pins Low and drive OE# High for a valid

write operation to take place. All addresses are

latched on the falling edge of WE# or CE#, which-

ever happens later. All data is latched on the ris-

ing edge of WE# or CE#, whichever happens first.

See Figure 2.

.The âDevice Commandsâ section of this specifi-

cation provides details on the specific device com-

mands implemented in the HY29LV320.

Accelerated Program Operation

This device offers accelerated program operations

through the âAccelerateâ function provided by the

WP#/ACC pin. This function is intended primarily

for faster programming throughput at the factory.

If VHH is applied to the WP#/ACC input, the device

enters the Unlock Bypass mode, temporarily

unprotects any protected sectors, and uses the

higher voltage on the pin to reduce the time re-

quired for program operations. The system would

then use the two-cycle program command se-

quence as required by the Unlock Bypass mode.

Removing VHH from the pin returns the device to

normal operation.

CE#

WE#

DATA IN

tAH

tDS

tAS

tDH

Figure 2. Write Operation

Note: WP# sector protection cannot be used while WP#/

ACC = VHH. Thus, all sectors are unprotected and can

be erased and programmed while in Accelerated Pro-

gramming mode.

Note: The Accelerate function does not affect the time

required for Erase operations.

See the description of the WP#/ACC pin in the

Pin Descriptions table for additional information

on this function.

Write Protect Function

The Write Protect function provides a hardware

method of protecting the boot sectors without us-

ing VID. This function is a second function pro-

vided by the WP#/ACC pin.

Placing this pin at VIL disables program and erase

operations in the bottom or top 32K words of the

array (the boot sectors). The affected sectors are

as follows (see Tables 1 and 2):

n HY29LV320B: S0 â S3

n HY29LV320T: S63 â S66

If the pin is placed at VIH, the protection state of

those sectors reverts to whether they were last

set to be protected or unprotected using the

method described in the Sector Group Protection

and Unprotection sections.

Note: Sectors protected by WP#/ACC = V remain pro-

tected during Temporary Sector Unprotect and cannot

be erased or programmed. Also see note under Accel-

erate Program Operation above.

Standby Operation

When the system is not reading or writing to the

device, it can place the device in the Standby

r1.3/May 02

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