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HY29LV320 Datasheet, PDF (29/44 Pages) Hynix Semiconductor – 32 Mbit (2M x 16) Low Voltage Flash Memory
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DC CHARACTERISTICS
Parameter
Description
Test Setup 2
Min
Typ
ILI
Input Load Current
VIN = VSS to VCC
ILIT
A[9], Input Load Current
A[9] = 12.5V
ILO
Output Leakage Current
VOUT = VSS to VCC
ICC1
VCC Active Read Current 1
CE# = VIL,
OE# = VIH,
5 MHz
1 MHz
9
2
ICC2
VCC Active Write Current 3, 4 CE# = VIL, OE# = VIH
20
CE# = VCC ± 0.3 V,
ICC3
VCC CE# Controlled Deep
Standby Current
RESET# = VCC ± 0.3 V,
WP#/ACC = VCC ± 0.3 V
0.5
or VSS ± 0.3 V
ICC4
VCC RESET# Controlled
Deep Standby Current
RESET# = VSS ± 0.3 V,
WP#/ACC = VCC ± 0.3 V
or VSS ± 0.3 V
0.5
ICC5
Automatic Sleep Mode
Current 5,
VIH = VCC ± 0.3 V,
VIL = VSS ± 0.3 V
0.5
IACC
Accelerated Program
Current 4
CE# = VIL
OE# = VIH
VHH
VCC
5
15
VIL
Input Low Voltage
-0.5
VIH Input High Voltage
0.7 x VCC
VID
Voltage for Electronic ID and
Temporary Sector Unprotect
VCC = 3.0V ± 10%
11.5
VHH
Voltage for Program
Acceleration
VCC = 3.0V ± 10%
11.5
VOL Output Low Voltage
VCC = VCC Min,
IOL = 4.0 mA
VOH1
VOH2
Output High Voltage
VCC = VCC Min,
IOH = -2.0 mA
VCC = VCC Min,
IOH = -100 µA
0.85 x VCC
VCC - 0.4
VLKO Low VCC Lockout Voltage4
2.3
Notes:
1. The ICC current is listed is typically less than 2 mA/MHz with OE# at VIH. Typical VCC is 3.0 V.
2. All maximum current specifications are tested with VCC = VCC Max unless otherwise noted.
3. ICC active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
5. Automatic sleep mode is enabled when addresses remain stable for t + 50 ns (typical).
ACC
HY29LV320
Max Unit
±1.0 µA
35
µA
±1.0
µA
16
mA
4
mA
30
mA
5
µA
5
µA
5
µA
10
mA
30
mA
0.8
V
VCC + 0.3 V
12.5
V
12.5
V
0.45
V
V
V
2.5
V
r1.3/May 02
29
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