HY29LV320 Datasheet, PDF (36/44 Pages) Hynix Semiconductor – 32 Mbit (2M x 16) Low Voltage Flash Memory

HY29LV320
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data (last two cycles)
Addresses
CE#
OE#
WE#
Data
RY/BY#
t_WC
t_AS
0x2AA
t_GHWL
t_CH
t_WP
t_CS
t_DS
0x55
t_WPH
t_DH
t_AH
SA
VA
Address = 0x555
for chip erase
0x30
Data = 0x10
for chip erase
t_WHWH2 or
t_WHWH3
Status
t_BUSY
VA
D_OUT
t_RB
V_CC
t_VCS
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
D_OUT is the true data at the read address.(0xFF after an erase operation).
2. V shown only to illustrate t measurement references. It cannot occur as shown during a valid command sequence.
CC
VCS
Figure 21. Sector/Chip Erase Operation Timings
36
r1.3/May 02