HY29LV320 Datasheet, PDF (39/44 Pages) Hynix Semiconductor – 32 Mbit (2M x 16) Low Voltage Flash Memory

AC CHARACTERISTICS
V _ID
RESET# ^VIH
HY29LV320
SGA, A[6],
A[1], A[0]
Data
CE#
Don't Care
Valid *
Sector Group Protect/
Sector Unprotect
0x60
0x60
t_VRST
t_PROT or t_UNPR
Valid *
Verify
0x40
Valid *
Status
WE#
OE#
Note: For Sector Group Protect, A[6] = 0, A[1] = 1, A[0] = 0. For Sector Unprotect, A[6] = 1, A[1] = 1, A[0] = 0.
Figure 26. Sector Group Protect and Sector Unprotect Timings
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
JEDEC Std
Description
Speed Option
- 70 - 80 - 90 - 12
t_AVAV
t_AVEL
t_ELAX
t_DVEH
t_EHDX
t_GHEL
t_WC Write Cycle Time ¹
t_AS Address Setup Time
t_AH Address Hold Time
t_DS Data Setup Time
t_DH Data Hold Time
t_GHEL
Read Recovery Time Before Write
(OE# High to CE# Low)
Min 70 80 90 120
Min
0
Min 45 45 45 50
Min 45 45 45 50
Min
0
Min
0
t_WLEL
t_WS WE# Setup Time
Min
0
t_EHWH
t_WH WE# Hold Time
Min
0
t_ELEH
t_CP CE# Pulse Width
Min 35 35 35 50
t_EHEL
t_CPH CE# Pulse Width High
Min
30
t_BUSY CE# High to RY/BY# Delay
Min
90
Notes:
1. Not 100% tested.
2. See Programming and Erase Operations table for Erase, Program and Endurance characterisitics.
Unit
ns
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ns
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ns
r1.3/May 02
39