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| HY29LV320 Datasheet, PDF (38/44 Pages) Hynix Semiconductor – 32 Mbit (2M x 16) Low Voltage Flash Memory | |||
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HY29LV320
AC CHARACTERISTICS
Enter Automatic
Erase
WE#
DQ[6]
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Erase
Suspend
Read
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 24. DQ[2] and DQ[6] Operation
Sector Protect and Unprotect, Temporary Sector Unprotect
Parameter
JEDEC Std
Description
tVIDR VID Transition Time for Temporary Sector Unprotect 1
tRSP RESET# Setup Time for Temporary Sector Unprotect
tVRST
RESET# Setup Time for Sector Group Protect and
Sector Unprotect
tPROT Sector Group Protect Time
tUNPR Sector Unprotect Time
Notes:
1. Not 100% tested.
Speed Option
- 70 - 80 - 90 - 12
Min
500
Min
4
Min
1
Max
150
Max
15
Unit
ns
µs
µs
µs
ms
V ID
RESET#
0 or 3V
tVIDR
CE#
WE#
RY/BY#
tVIDR
tRSP
Figure 25. Temporary Sector Unprotect Timings
0 or 3V
38
r1.3/May 02
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