HY29LV320 Datasheet, PDF (23/44 Pages) Hynix Semiconductor – 32 Mbit (2M x 16) Low Voltage Flash Memory

Table 11. CFI Mode: System Interface Data Values
Description
V_CC supply, minimum (2.7V)
V_CC supply, maximum (3.6V)
V_PP supply, minimum (none)
V_PP supply, maximum (none)
Typical timeout for single word/byte write (2^N µs)
Typical timeout for maximum size buffer write (2^N µs)
Typical timeout for individual block erase (2^N ms)
Typical timeout for full chip erase (2^N ms)
Maximum timeout for single word/byte write (2^N x Typ)
Maximum timeout for maximum size buffer write (2^N x Typ)
Maximum timeout for individual block erase (2^N x Typ)
Maximum timeout for full chip erase (not supported)
Table 12. CFI Mode: Device Geometry Data Values
Description
Device size (2^N bytes)
Flash device interface code (01 = asynchronous x16)
Maximum number of bytes in multi-byte write (not supported)
Number of erase block regions
Erase block region 1 information
[2E, 2D] = # of blocks in region - 1
[30, 2F] = size in multiples of 256-bytes
Erase block region 2 information
Erase block region 3 information
Erase block region 4 information
Address
1B
1C
1D
1E
1F
20
21
22
23
24
25
26
Address
27
28
29
2A
2B
2C
2D
2E
2F
30
31
32
33
34
35
36
37
38
39
3A
3B
3C
HY29LV320
Data
0027
0036
0000
0000
0004
0000
0009
000F
0005
0000
0004
0000
Data
0016
0001
0000
0000
0000
0004
0000
0000
0040
0000
0001
0000
0020
0000
0000
0000
0080
0000
003E
0000
0000
0001
r1.3/May 02
23