HYMP112F72CP8N3-C4 Datasheet, PDF (23/32 Pages) Hynix Semiconductor – 240pin Fully Buffered DDR2 SDRAM DIMMs

1240pin Fully Buffered DDR2 SDRAM DIMMs
Timing Parameters
Parameter
Symbol
Min
EI Assertion Pass-Thru Timing
tEI Propagad
EI Deassertion Pass-Thru Timing
tEID
EI Assertion Duration
tEI
100
Bit Lock Interval
tBitLock
Frame Lock Interval
tFrameLock
Note:
1. Defined in FB-DIMM Architecture and Protocol Spec.
Typ
Max
Unit Note
-
4
clks
-
bit lock
clks
-
clks
1
119
frames
1
154
frames
1
Environmental Parameters
Symbol
T_OPR
H_OPR
T_STG
H_STG
P_BAR
P_BAR
Parameter
Operating temperature
Operating humidity(relative)
Storage temperature
Storage humidity(without condensation)
Barometric pressure(operating)
Barometric pressure (storage)
Rating
See Note
10 to 90
-50 to +100
5 to 95
3050
15240
Units
%
o_C
%
m
m
Notes
1
2
2
2
2
2
Note:
1. The designer must meet the case temperature specifications for individual module components.
2. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and
device functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating
conditions for extended periods
Rev 1.01 / Sep. 2008
23