HYMP112F72CP8N3-C4 Datasheet, PDF (22/32 Pages) Hynix Semiconductor – 240pin Fully Buffered DDR2 SDRAM DIMMs

1240pin Fully Buffered DDR2 SDRAM DIMMs
Electrical Characteristics
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pins relative to Vss
Voltage on V_CC relative to Vss
Voltage on V_DD relative to Vss
Voltage on V_TT relative to Vss
Storage Temperature range
Symbol
V_IN, V_OUT
V_CC
V_DD
V_TT
T_STG
Value
- 0.3 V ~ 1.75 V
- 0.3 V ~ 1.75 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 55 ^oC ~ 100 ^oC
Unit
V
V
V
V
o_C
Note
1
1
1
1
1
Note:
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING TEMPERATURE RANGE
Parameter
AMB Component Case temperature Range
DRAM Component Case Temperature Range
Symbol
T_CASE
T_CASE
Rating
0 ~ + 110
0 ~ + 95
Units
o_C
o_C
Notes
1,2
Note:
1. Within the DRAM component Case Temperature range all DRAM specification will be supported.
2. If the DRAM case temperature is Above 85^oC, the Auto-Refresh command interval has to be reduced from 7.8us of
tREFI to 3.9us.
Supply Voltage Levels and DC Operating Conditions.
Parameter
AMB Supply Voltage
DRAM Supply Voltage
Termination Voltage
EEPROM Supply Voltage
DC Input Logic High(SPD)
DC Input Logic Low(SPD)
DC Input Logic High(RESET)
DC Input Logic Low(RESET)
Leakage Current (RESET)
Leakage Current (Link)
Symbol
V_CC
V_DD
V_TT
V_DDSPD
V_IH(DC)
V_IL(DC)
V_IH(DC)
V_IL(DC)
IL
IL
Min
1.455
1.7
0.48 x V_DD
3.0
2.1
-
1.0
-
-90
-5
Nom
1.5
1.8
0.50 x V_DD
3.3
-
-
-
-
-
-
Max
1.575
1.9
0.52 x V_DD
3.6
V_DDSPD
0.8
-
+0.5
+90
+5
Unit
V
V
V
V
V
V
V
V
uA
uA
Note
1
1
2
2
2
3
Note:
1. Applies for SMB and SPD bus Signals.
2. Applies for AMB CMOS Signal RESET.
3. for all other AMB related DC parameters, please refer to the High Speed Differential Link Interface Specifications
Rev 1.01 / Sep. 2008
22