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| GMS77C1001 Datasheet, PDF (13/44 Pages) Hynix Semiconductor – 8-BIT SINGLE-CHIP MICROCONTROLLERS | |||
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GMS77C1000/GMS77C1001
7.3 DC Characteristics (1)
⢠(TA=-40°C~+85°C)
Parameter
Symbol
Test Condition
Specification
Unit
Min
Typ1
Max
Supply Voltage
XT, RC, LF VDD
2.5
5.5
V
HF
4.5
5.5
VDD start voltage to ensure
Power-On Reset
VPOR
-
VSS
-
V
VDD rise rate
SVDD2
0.05
-
-
V/mS
RAM Data Retention
Voltage
VDR
-
1.5
-
V
Power Fail Detection
Normal Level VPFD
-
3
-
V
Low Level
-
2.5
-
Supply Current
XT, RC4
HF
IDD3
XIN = 4MHz, VDD = 5V
XIN = 20MHz, VDD = 5V
-
1.8
3.3
mA
-
9.0
20
mA
LF
XIN = 32KHz, VDD = 3V, WDT Disabled
-
17
40
uA
Power Down Current
IPD5 VDD = 3V, WDT Enabled
VDD = 3V, WDT Disabled
-
10
20
uA
-
0.25
5
1. Data in âTypâ column is at 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
2. This parameter is characterized but not tested.
3. The test conditions for all IDD measurements in NOP execution are:
XIN = external square wave; all I/O pins tristated, pulled to VSS, EC0 = VDD, RESET = VDD; WDT disabled/enabled as specified.
4. Does not include current through Rext. The current through the resistor can be estimated by the formula; IR = VDD/2Rext (mA)
5. Power down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS as
like measurement conditions of supply current.
10
July. 2001 Ver. 1.1
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