MB81EDS516545_10 Datasheet, PDF (23/60 Pages) Fujitsu Component Limited. – 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

MB81EDS516545
CK
CK
Command _READ
tAC (Min.)
RDQS
DQ
NOP
CAS Latency
tDQSCK
tDQSCK
tLZ
tQH
tDQSQ
tAC
Qeven
tDQSQ
tAC
tQH
Qodd
Qeven
Qodd
tAC(Max.)
RDQS
DQ
tDQSCK
tDQSCK
tLZ
tAC
tQH
tDQSQ
tAC
Qeven
tDQSQ
tQH
Qodd
5. READ with Auto Precharge (READA)
READA commands can be issued by READ command with AP (A10) = H. Auto precharge is a feature which
precharge the activated bank after the completion of burst read operation. The tRAS is defined from between
ACTIVE (ACT) command to the internal precharge which starts after BL/2 from READA command. READ with
Auto precharge operation should not be interrupted by subsequent READ, READA, WRITE, WRITEA commands.
Next ACTIVE (ACT) command can be issued after BL/2 + tRP after READA command.
DS05-11463-2E
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