MB81EDS516545_10 Datasheet, PDF (1/60 Pages) Fujitsu Component Limited. – 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11463-2E
MEMORY Consumer FCRAM^TM
CMOS
512M Bit (4 bank x 2M word x 64 bit)
Consumer Applications Specific Memory for SiP
MB81EDS516545
■ DESCRIPTION
The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double
Data Rate (LPDDR) SDRAM Interface containing 536, 870, 912 storages accessible in a 64-bit format.
MB81EDS516545 is suited for consumer application requiring high data band width with low power consumption.
* : FCRAM is a trademark of Fujitsu Semiconductor Limited, Japan
■ FEATURES
• 2 M word × 64 bit × 4 banks organization
• DDR Burst Read/Write Access Capability
-tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C)
-tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)
• Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V
• Junction Temperature:
TJ = − 10 °C to + 125 °C
• 1.8 V-CMOS compatible inputs
• Unidirectional READ Data Strobe per 2 byte
• Unidirectional WRITE Data Strobe per 2 byte
• Burst Length: 2, 4, 8, 16
• CAS latency: 2, 3, 4
• Clock Stop capability during idle periods
• Auto Precharge option for each burst access
• Configurable Driver Strength and Pre Driver Strength
• Auto Refresh and Self Refresh Modes
• Deep Power Down Mode
• Low Power Consumption
-IDD4R =330 mA Max @ 3.46 GByte/s
-IDD4W =380 mA Max @ 3.46 GByte/s
• 8 K refresh cycles /16.7 ms (Tj ≤ +125 °C)
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2010.7