MB85RS2MTPF-G Datasheet, PDF (19/28 Pages) Fujitsu Component Limited. – 2 M (256 K × 8) Bit SPI

MB85RS2MT
■ ESD AND LATCH-UP
Test
ESD HBM (Human Body Model)
JESD22-A114 compliant
ESD MM (Machine Model)
JESD22-A115 compliant
ESD CDM (Charged Device Model)
JESD22-C101 compliant
Latch-Up (I-test)
JESD78 compliant
Latch-Up (Vsupply overvoltage test)
JESD78 compliant
Latch-Up (Current Method)
Proprietary method
Latch-Up (C-V Method)
Proprietary method
DUT
MB85RS2MTPF-G-JNE2
MB85RS2MTPH-G-JNE1
• Current method of Latch-Up Resistance Test
Protection Resistance
Value
⎯
⎯
⎯
⎯
⎯
⎯
⎯
A
IIN
Test terminal VDD
+
VIN
V
-
DUT
VSS
Reference
terminal
VDD
(Max.Rating)
Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow.
Confirm the latch up does not occur under IIN = ± 300 mA.
In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be
increased to the level that meets the specific requirement.
DS501-00023-0v01-E
19