MB85RS2MTPF-G Datasheet, PDF (14/28 Pages) Fujitsu Component Limited. – 2 M (256 K × 8) Bit SPI

MB85RS2MT
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Condition
Value(TBD)
Unit
Min
Typ
Max
0 ≤ CS< VDD
⎯
⎯
200
Input leakage current*¹
|ILI|
CS = VDD
⎯
⎯
WP, HOLD, SCK
SI = 0 V to VDD
⎯
⎯
1
μA
1
Output leakage current*²
|ILO|
SO = 0 V to VDD
⎯
⎯
1
μA
Operating power supply current IDD
SCK = 25 MHz
⎯
⎯
10.6
mA
Standby current
ISB
All inputs VSS or
SCK = SI = CS = VDD
⎯
35
150
μA
Sleep current
IZZ
CS = VDD
All inputs VSS or VDD
⎯
⎯
10
μA
Output high voltage
VOH
IOH = − 2 mA
VDD − 0.5
⎯
⎯
V
Output low voltage
VOL
IOL = 2 mA
⎯
⎯
0.4
V
*1 : Applicable pin : CS, WP, HOLD, SCK, SI
*2 : Applicable pin : SO
14
DS501-00023-0v01-E