MB85RS2MTPF-G Datasheet, PDF (13/28 Pages) Fujitsu Component Limited. – 2 M (256 K × 8) Bit SPI

MB85RS2MT
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Power supply voltage*
VDD
− 0.5
Input voltage*
Output voltage*
Operation ambient temperature
VIN
VOUT
TA
− 0.5
− 0.5
− 40
Storage temperature
Tstg
− 55
*:These parameters are based on the condition that VSS is 0 V.
Rating
Max
+ 4.0
VDD + 0.5
VDD + 0.5
+ 85
+ 125
Unit
V
V
V
°C
°C
WARNING: Semiconductor devices may be permanently damaged by application of stress (including, without
limitation, voltage, current or temperature) in excess of absolute maximum ratings.
Do not exceed any of these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Power supply voltage*
VDD
1.8
Input high voltage*
VIH
VDD × 0.7
Input low voltage*
VIL
− 0.5
Operation ambient temperature
TA
− 40
*:These parameters are based on the condition that VSS is 0 V.
Value
Typ
3.3
⎯
⎯
⎯
Max
3.6
VDD + 0.5
VDD × 0.3
+ 85
Unit
V
V
V
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated under these conditions.
Any use of semiconductor devices will be under their recommended operating condition.
Operation under any conditions other than these conditions may adversely affect reliability of
device and could result in device failure.
No warranty is made with respect to any use, operating conditions or combinations not represented
on this data sheet. If you are considering application under any conditions other than listed herein,
please contact sales representatives beforehand.
DS501-00023-0v01-E
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