MB85RS2MTPF-G Datasheet, PDF (18/28 Pages) Fujitsu Component Limited. – 2 M (256 K × 8) Bit SPI

MB85RS2MT
■ POWER ON/OFF SEQUENCE
tpd
tf
VDD
3.0 V
VIH (Min)
tr
tpu
VDD
3.0 V
VIH (Min)
1.0 V
VIL (Max)
1.0 V
VIL (Max)
GND
CS
CS >VDD × 0.8*
* : CS (Max) < VDD + 0.5 V
CS : do not care
GND
CS >VDD × 0.8*
CS
Parameter
CS level hold time at power OFF
CS level hold time at power ON
Power supply rising time
Power supply falling time
Symbol
tpd
tpu
tr
tf
Value
Min
Max
0
⎯
250
⎯
0.05
⎯
0.1
⎯
Unit
ns
ns
ms/V
ms/V
If the device does not operate within the specified conditions of read cycle, write cycle or power on/off
sequence, memory data can not be guaranteed.
■ FRAM CHARACTERISTICS
Parameter
Read/Write Endurance
Data Retention
Value
Min Max
10¹³
⎯
10
⎯
Unit
Remarks
Times/byte
Years
Operation Ambient Temperature TA = + 85 °C
Total numbers of reading and writing
Operation Ambient Temperature TA = + 85 °C
Retention time of the first reading/writing data
right after shipment
Note : Total number of reading and writing defines the minimum value of endurance, as an FRAM memory
operates with destructive readout mechanism.
■ NOTE ON USE
We recommend programming of the device after reflow. Data written before reflow cannot be guaranteed.
18
DS501-00023-0v01-E