PXS20 Datasheet, PDF (93/119 Pages) Freescale Semiconductor, Inc – PXS20 Microcontroller

Electrical characteristics
4 _{During the sample time the input capacitance CS can be charged/discharged by the external source. The internal resistance}
of the analog source must allow the capacitance to reach its final voltage level within t_sample. After the end of the sample time
t_sample, changes of the analog input voltage have no effect on the conversion result. Values for the sample clock t_sample
depend on programming.
5 _{This parameter does not include the sample time tsample, but only the time for determining the digital result and the time to}
load the result register with the conversion result.
6 _{See Figure 9.}
7 _{For the 144-pin package.}
8 _{No missing codes.}
3.16 Flash memory electrical characteristics
Table 24. Flash memory program and erase electrical specifications
No.
Symbol
Parameter
Min
Typ¹
Factory
Avg²
Initial
Max³
Lifetime
Max⁴
Unit
1 T_DWPROGRAM *⁵ Double word (64 bits) program time⁶
— 39 — — 500 µs
2 T_PPROGRAM *⁵ Page(128 bits) program time⁶
— 48 53 100 500 µs
3 T_16KPPERASE *⁵ 16 KB block pre-program and erase time
— TBD TBD 500 5000 ms
4 T_48KPPERASE *⁵ 48 KB block pre-program and erase time
— TBD TBD 750 5000 ms
5 T_64KPPERASE *⁵ 64 KB block pre-program and erase time
— TBD TBD 900 5000 ms
6 T_128KPPERASE *⁵ 128 KB block pre-program and erase time
— TBD TBD 1300 7500 ms
7 T_256KPPERASE *⁵ 256 KB block pre-program and erase time
— TBD TBD 2600 15000 ms
1 _{Typical program and erase times assume nominal supply values and operation at TJ = 25 °C. These values are}
characterized, but not tested.
2 _{Factory Average program and erase times represent the effective performance averaged over > 1024 pages or blocks,}
and are provided for factory throughput estimation assuming < 100 program/erase cycles, nominal supply values and
operation at T_J = 25 °C. These values are characterized, but not tested.
3 _{Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for < 100}
program/erase cycles, nominal supply values and operation at T_J = 25 °C. These values are verified at production test.
4 _{Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These}
values are characterized, but not tested.
5 _{See Notes for individual specifications, as shown in column headings.}
6 _{Actual hardware programming times. These do not include software overhead.}
Table 25. Flash memory timing
Symbol
Parameter
Min
T_RES D Time from clearing the MCR-ESUS or PSUS bit with EHV = 1 —
until DONE goes low
T_DONE D Time from 0 to 1 transition on the MCR-EHV bit initiating a
—
program/erase until the MCR-DONE bit is cleared
Value
Unit
Typ
Max
—
100 ns
—
5
ns
PXS20 Microcontroller Data Sheet, Rev. 1
Freescale Semiconductor
93
Preliminary—Subject to Change Without Notice