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MRF6S20010NR1_09 Datasheet, PDF (9/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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W - CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
WâCDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.0001
0
2
4
6
8
10
PEAKâTOâAVERAGE (dB)
Figure 15. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
+20
3.84 MHz
+30
Channel BW
0
â10
â20
â30
â40
â50
âACPR in +ACPR in
â60 âIM3 in
3.84 MHz BW 3.84 MHz BW +IM3 in
â70 3.84 MHz BW
3.84 MHz BW
â80
â25 â20 â15 â10 â5 0 5 10 15 20 25
f, FREQUENCY (MHz)
Figure 16. 2-Carrier W-CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
9
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