MRF6S20010NR1_09 Datasheet, PDF(11/27 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S20010NR1_09 Datasheet, PDF (11/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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N - CDMA TYPICAL CHARACTERISTICS â 1930-1990 MHz

VDD

C11

R2 C1

VGS

C4 C5

C9 C10

MRF6S20010N

Rev 0

Figure 18. MRF6S20010NR1(GNR1) Test Circuit Component Layout â 1930 - 1990 MHz

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

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