MRF6S20010NR1_09 Datasheet, PDF (19/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 9. Common Source Scattering Parameters (V_DD = 28 V, I_DQ = 126 mA, T_A = 25°C, 50 ohm system) (continued)
f
MHz
S₁₁
|S₁₁|
∠φ
S₂₁
|S₂₁|
∠φ
S₁₂
|S₁₂|
∠φ
S₂₂
|S₂₂|
∠φ
2500
0.923
- 177.5
0.666
5.462
0.006
42.56
0.957
- 177.2
2550
0.927
- 178.0
0.625
3.680
0.006
52.25
0.962
- 177.8
2600
0.937
- 178.8
0.591
1.864
0.006
60.26
0.961
- 178.4
2650
0.937
- 179.0
0.559
0.237
0.007
64.14
0.964
- 179.1
2700
0.942
- 179.8
0.529
- 1.378
0.007
65.62
0.964
- 179.6
2750
0.945
- 179.9
0.504
- 2.768
0.007
64.71
0.964
179.7
2800
0.946
179.5
0.479
- 4.088
0.007
67.58
0.966
179.4
2850
0.950
179.3
0.456
- 5.412
0.007
75.44
0.966
178.8
2900
0.949
178.8
0.436
- 6.305
0.008
82.04
0.964
178.3
2950
0.952
178.5
0.419
- 7.279
0.009
83.60
0.967
177.9
3000
0.950
178.4
0.402
- 8.087
0.011
83.41
0.968
177.4
3050
0.958
177.9
0.387
- 9.138
0.012
81.35
0.964
176.8
3100
0.953
177.7
0.373
- 9.904
0.013
77.45
0.969
176.4
3150
0.957
177.2
0.362
- 10.86
0.014
70.98
0.970
176.2
3200
0.960
177.4
0.350
- 11.79
0.013
67.00
0.970
175.5
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
19