MRF6S20010NR1_09 Datasheet, PDF (1/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
• Typical Two - Tone Performance @ 2170 MHz: V_DD = 28 Volts, I_DQ =
130 mA, P_out = 10 Watts PEP
Power Gain — 15.5 dB
Drain Efficiency — 36%
IMD — - 34 dBc
• Typical 2 - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ = 130 mA,
P_out = 1 Watt Avg., Full Frequency Band (2130 - 2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 49 dBc in 3.84 MHz Channel Bandwidth
• Typical Single- Carrier N - CDMA Performance: V_DD = 28 Volts, I_DQ =
130 mA, P_out = 1 Watt Avg., Full Frequency Band (1930- 1990 MHz),
IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Band-
width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency— 16%
ACPR @ 885 kHz Offset = - 60 dBc in 30 kHz Bandwidth
• Typical GSM EDGE Performance: V_DD = 28 Volts, I_DQ = 130 mA, P_out =
4 Watts Avg., Full Frequency Band (1805- 1880 MHz)
Power Gain — 16 dB
Drain Efficiency — 33%
EVM — 1.3% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MRF6S20010N
Rev. 3, 6/2009
MRF6S20010NR1
MRF6S20010GNR1
1600- 2200 MHz, 10 W, 28 V
GSM, GSM EDGE
SINGLE N - CDMA
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265 - 09, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S20010NR1
CASE 1265A - 03, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MRF6S20010GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
V_DSS
- 0.5, +68
Vdc
Gate - Source Voltage
V_GS
- 0.5, +12
Vdc
Storage Temperature Range
T_stg
- 65 to +150
°C
Case Operating Temperature
T_C
150
°C
Operating Junction Temperature ^(1,2)
T_J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2005 - 2006, 2008 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
1