MRF6S20010NR1_09 Datasheet, PDF (8/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

W - CDMA TYPICAL CHARACTERISTICS — 2110-2170 MHz
16
18
15.8
17
15.6
15.4 _{VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 130 mA}
15.2 ^{2−Carrier W−CDMA, 10 MHz Carrier Spacing}
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
15 _{@ 0.01% Probability (CCDF)}
16
G_ps
15
η_D
14
−45
−10
14.8
−47
−12
14.6
IM3 −49
14.4
ACPR _−51
−14
14.2
−53
−16
IRL
14
−55
−18
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 13. 2 - Carrier W - CDMA Broadband Performance
@ P_out = 1 Watt Avg.
49
−20
V_DD = 28 Vdc, I_DQ = 130 mA
42
f1 = 2165 MHz, f2 = 2175 MHz
2−Carrier W−CDMA, 10 MHz Carrier
−25
Spacing, 3.84 MHz Channel
35 _{Bandwidth, PAR = 8.5 dB}
−30
@ 0.01% Probability (CCDF)
28
−35
η_D
21
−40
G_ps
T_C = 25_C
14
−45
IM3
ACPR
7
−50
0
−55
0.1
1
10 20
P_out, OUTPUT POWER (WATTS) AVG.
Figure 14. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S20010NR1 MRF6S20010GNR1
8
RF Device Data
Freescale Semiconductor