MRF6S20010NR1_09 Datasheet, PDF (26/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
2
3
Date
Dec. 2008
June 2009
Description
• Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for
standardization across products, p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q), On Characteristics table, p. 2
• Corrected C_iss test condition to indicate AC stimulus on the V_GS connection versus the V_DS connection,
Dynamic Characteristics table, p. 2
• Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 10, 14
• Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the
device’s capabilities, p. 6
• Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps² and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Removed ALT1 definition from Fig. 21, Single - Carrier CCDF N - CDMA, given no supporting performance
information provided, p. 13
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 20 - 22. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 23 - 25. Corrected cross hatch pattern and
its dimensions (D2 and E2) on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3
changed from Min - Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number.
• Added Product Documentation and Revision History, p. 26
• Corrected decimal placement for C_iss (changed 0.12 pF to 120 pF) and C_oss (changed 0.02 pF to 20 pF),
Dynamic Characteristics table, p. 2
• Added footnote, Measurement made with device in straight lead configuration before any lead forming
operation is applied, to Functional Tests table, p. 2.
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to
Product Documentation, Application Notes, p. 26
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26
MRF6S20010NR1 MRF6S20010GNR1
26
RF Device Data
Freescale Semiconductor