MRF6S20010NR1_09 Datasheet, PDF (12/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

N - CDMA TYPICAL CHARACTERISTICS — 1930-1990 MHz
15.9
19
15.8 ^{VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 500 mA}
18
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
15.7 _{Codes 8 Through 13)}
15.6
17
η_D
16
15.5
15
15.4
G_ps
−59
15.3
−59.4
−8
15.2
ACPR
−59.8
−11
15.1
−60.2
−14
15
−60.6
−17
IRL
14.9
−61
−20
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 19. Single - Carrier N - CDMA Broadband Performance
@ P_out = 1 Watt Avg.
50
−40
V_DD = 28 Vdc, I_DQ = 130 mA
f = 1960 MHz, N−CDMA IS−95
40 (Pilot, Sync, Paging, Traffic Codes
−45
8 Through 13)
30
−50
η_D
20
−55
ACPR
10
−60
0
−65
0.1
1
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 20. Single - Carrier N - CDMA ACPR and Drain
Efficiency versus Output Power
MRF6S20010NR1 MRF6S20010GNR1
12
RF Device Data
Freescale Semiconductor