MRF6S20010NR1_09 Datasheet, PDF (2/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 78°C, 1 W CW
Case Temperature 79°C, 10 W PEP, Two - Tone Test
R_θJC
°C/W
2.5
5.9
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
I_DSS
—
I_GSS
—
—
10
μAdc
—
1
μAdc
—
500
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 40 μAdc)
V_GS(th)
1.5
2.2
3.5
Vdc
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 130 mAdc, Measured in Functional Test)
V_GS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 0.4 Adc)
V_DS(on)
—
0.33
0.4
Vdc
Dynamic Characteristics ⁽³⁾
Output Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
20
—
pF
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
11.6
—
pF
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_iss
—
120
—
pF
Functional Tests ⁽⁴⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 130 mA, P_out = 10 W PEP, f1 = 2170 MHz,
f2 = 2170.1 MHz, Two - Tone Test
Power Gain
G_ps
14
15.5
17
dB
Drain Efficiency
η_D
33
36
—
%
Intermodulation Distortion
IMD
—
- 34
- 28
dBc
Input Return Loss
IRL
—
- 15
-9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched on input.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRF6S20010NR1 MRF6S20010GNR1
2
RF Device Data
Freescale Semiconductor