MRF6S20010NR1_09 Datasheet, PDF (16/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

GSM EDGE TYPICAL CHARACTERISTICS — 1805-1880 MHz
17
50
0
G_ps
16
η_D
15
40
−10
30
−20
IRL
14
20
−30
V_DD = 28 Vdc
I_DQ = 130 mA
13
10
−40
1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900
f, FREQUENCY (MHz)
Figure 25. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 4 Watts
6
60
V_DD = 28 Vdc
5 I_DQ = 130 mA
50
f = 1840 MHz
4
40
3
η_D
30
2
20
EVM
1
10
0
0
0.1
1
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 26. Error Vector Magnitude and Drain
Efficiency versus Output Power
−50
V_DD = 28 Vdc
−55 ^IDQ ^{= 130 mA}
f = 1840 MHz
−60
−65
SR @ 400 kHz
−70
−75
SR @ 600 kHz
−80
0.1
1
10
P_out, OUTPUT POWER (WATTS)
Figure 27. Spectral Regrowth at 400 kHz and
600 kHz versus Output Power
GSM EDGE TEST SIGNAL
−10
Reference Power
−20
−30
−40
VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−50
−60
−70
400 kHz
−80
600 kHz
−90
−100
400 kHz
600 kHz
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 28. EDGE Spectrum
MRF6S20010NR1 MRF6S20010GNR1
16
RF Device Data
Freescale Semiconductor