MRF6S20010NR1_09 Datasheet, PDF (6/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 2110- 2170 MHz
40
η_D
36
IRL
32
28
V_DD = 28 Vdc, P_out = 10 W (PEP)
I_DQ = 130 mA, 100 kHz Tone Spacing
24
20
IMD
16
G_ps
2050
2090
2130
2170
−5
−10
−15
−20
−25
−30
−35
−40
2210
f, FREQUENCY (MHz)
Figure 3. Two - Tone Wideband Performance
@ P_out = 10 Watts (PEP)
18
17 ^{IDQ = 195 mA}
16
162.5 mA
130 mA
15
97.5 mA
14
13
65 mA
V_DD = 28 Vdc, f = 2170 MHz
12
Two−Tone Measurements
100 kHz Tone Spacing
11
0.1
1
10
30
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−10
V_DD = 28 Vdc, f = 2170 MHz
Two−Tone Measurements
−20 100 kHz Tone Spacing
−30
I_DQ = 65 mA
195 mA
−40
162.5 mA
−50
97.5 mA
130 mA
−60
0.1
1
10
30
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
−10
V_DD = 28 Vdc, I_DQ = 130 mA
−20 ^{f1 = 2170 MHz, f2 = 2170.1 MHz}
Two−Tone Measurements
−30
3rd Order
−40
−50
5th Order
−60
7th Order
−70
0.1
1
10
30
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
−20
3rd Order
−30
−40
V_DD = 28 Vdc, P_out = 10 W (PEP)
I_DQ = 130 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2170 MHz
−50
5th Order
−60
7th Order
−70
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
MRF6S20010NR1 MRF6S20010GNR1
6
RF Device Data
Freescale Semiconductor