MRF6S20010NR1_09 Datasheet, PDF (3/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical 2 - Carrier W - CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 130 mA, P_out =
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
—
15.5
—
dB
Drain Efficiency
η_D
—
15
—
%
Gain Flatness in 30 MHz Bandwidth @ P_out = 1 W CW
G_F
—
0.3
—
dB
Intermodulation Distortion
IM3
—
- 47
—
dBc
Adjacent Channel Power Ratio
ACPR
—
- 49
—
dBc
Typical N - CDMA Performances (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 130 mA, P_out = 1 W Avg.,
1930 MHz<Frequency<1990 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G_ps
—
15.5
—
dB
Drain Efficiency
η_D
—
16
—
%
Gain Flatness in 30 MHz Bandwidth @ P_out = 1 W CW
G_F
—
0.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
- 60
—
dBc
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V_DD = 28 Vdc, I_DQ = 130 mA, P_out = 4 W Avg.,
1805 - 1880 MHz, EDGE Modulation
Power Gain
G_ps
—
16
—
dB
Drain Efficiency
η_D
—
33
—
%
Gain Flatness in 30 MHz Bandwidth @ P_out = 4 W CW
G_F
—
0.3
—
dB
Error Vector Magnitude
EVM
—
1.3
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 60
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 70
—
dBc
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
3