MRF6S20010NR1_09 Datasheet, PDF(15/27 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S20010NR1_09 Datasheet, PDF (15/27 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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GSM EDGE TYPICAL CHARACTERISTICS â 1805-1880 MHz

VDD

C11

R2 C1

VGS

C4 C5

C9 C10

MRF6S20010N

Rev. 0

Figure 24. MRF6S20010NR1(GNR1) Test Circuit Component Layout â 1805 - 1880 MHz

RF Device Data

Freescale Semiconductor

MRF6S20010NR1 MRF6S20010GNR1

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