MC908JB12DWE Datasheet, PDF (61/332 Pages) Freescale Semiconductor, Inc – MC68HC908JB16 Technical Data

FLASH Memory
4.4 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase
operation.
Address: $FE08
Bit 7
6
5
4
3
2
1
Bit 0
Read: 0
0
0
0
HVEN MASS ERASE PGM
Write:
Reset: 0
0
0
0
0
0
0
0
= Unimplemented
Figure 4-2. FLASH Control Register (FLCR)
HVEN — High Voltage Enable Bit
This read/write bit enables high voltage from the charge pump to the
memory for either program or erase operation. It can only be set if
either PGM=1 or ERASE=1 and the sequence for erase or
program/verify is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
1 = Mass Erase operation selected
0 = Block Erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation not selected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
1 = Program operation selected
0 = Program operation not selected
MC68HC908JB16 — Rev. 1.1
Freescale Semiconductor
FLASH Memory
Technical Data
61