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MC908JB12DWE Datasheet, PDF (324/332 Pages) Freescale Semiconductor, Inc – MC68HC908JB16 Technical Data
◁
Electrical Specifications
20.14 FLASH Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
RAM data retention voltage
VRDR
1.3
—
V
FLASH block size
—
512
Bytes
FLASH programming size
—
64
Bytes
FLASH read bus clock frequency
fRead(1)
32 k
8.4 M
Hz
FLASH block erase time
tErase(2)
10
—
ms
FLASH mass erase time
tMErase(3)
200
—
ms
FLASH PGM/ERASE to HVEN set up time
tnvs
5
—
µs
FLASH high-voltage hold time
tnvh
5
—
µs
FLASH high-voltage hold time (mass erase)
tnvhl
100
—
µs
FLASH program hold time
FLASH program time
tpgs
tProg
10
—
µs
20
40
µs
FLASH return to read time
trcv(4)
1
—
µs
FLASH cumulative program hv period
tHV(5)
—
8
ms
FLASH row erase endurance(6)
—
10 k
—
Cycles
FLASH row program endurance(7)
—
10 k
—
Cycles
FLASH data retention time(8)
—
10
—
Years
Notes:
1. fRead is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than tErase (Min), there is no erase-disturb, but it reduced the endurance of the FLASH
memory.
3. If the mass erase time is longer than tMErase (Min), there is no erase-disturb, but it reduces the endurance of the FLASH
memory.
4. trcv is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
HVEN to logic 0.
5. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
specified.
Technical Data
324
Electrical Specifications
MC68HC908JB16 — Rev. 1.1
Freescale Semiconductor
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