MC908JB12DWE Datasheet, PDF (321/332 Pages) Freescale Semiconductor, Inc – MC68HC908JB16 Technical Data

Electrical Specifications
20.11 USB Low-Speed Source Electrical Characteristics
Characteristic⁽¹⁾
Internal operating frequency
Transition time⁽²⁾
Rise time
Fall time
Rise/Fall time matching
Low speed data rate
Symbol
f_OP
Conditions
—
Min
Typ
Max Unit
—
6
—
MHz
t_R
t_F
t_RFM
t_DRATE
C_L = 200 pF
75
—
C_L = 600 pF
300
ns
C_L = 200 pF
75
—
C_L = 600 pF
300
t_R/t_F
80
—
120
%
1.5 Mbs ± 1.5%
1.4775
676.8
1.500
666.0
1.5225
656.8
Mbs
ns
Source differential driver jitter
To next transition
For paired transitions
t_DDJ1
C_L = 600 pF
Measured at
–25
—
t_DDJ2
crossover point
–10
—
25
ns
10
Receiver data jitter tolerance
To next transition
For paired transitions
t_DJR1
C_L = 600 pF
Measured at
–75
—
t_DJR2
crossover point
–45
—
75
ns
45
Source SEO interval of EOP
t_LEOPT
Measured at
crossover point
1.25
—
1.50
µs
Source jitter for differential transition
to SE0 transition⁽³⁾
Measured at
crossover point
667
ns
Receiver SEO interval of EOP
Must reject as EOP
Must accept
t_LEOPR1
t_LEOPR2
Measured at
crossover point
210
670
—
—
—
ns
—
Width of SEO interval during
differential transition
t_LST
Measured at
crossover point
—
—
210
ns
Notes:
1. All voltages are measured from local ground, unless otherwise specified. All timings use a capacitive load of 50 pF, unless
otherwise specified. Low-speed timings have a 1.5kΩ pullup to 2.8 V on the D– data line.
2. Transition times are measured from 10% to 90% of the data signal. The rising and falling edges should be smoothly tran-
sitioning (monotonic). Capacitive loading includes 50 pF of tester capacitance.
3. The two transitions are a (nominal) bit time apart.
MC68HC908JB16 — Rev. 1.1
Freescale Semiconductor
Electrical Specifications
Technical Data
321