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MC9S08QD4_07 Datasheet, PDF (177/202 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit (CPU)
Appendix A Electrical Characteristics
A.4 ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table A-3. ESD and Latch-up Test Conditions
Model
Human
Body
Machine
Description
Series resistance
Storage capacitance
Number of pulses per pin
Series resistance
Symbol
R1
C
—
R1
Value
1500
100
3
0
Unit
Ω
pF
Ω
Storage capacitance
C
Number of pulses per pin
—
Latch-up Minimum input voltage limit
Maximum input voltage limit
200
pF
3
– 2.5
V
7.5
V
Table A-4. ESD and Latch-Up Protection Characteristics
No.
Rating1
Symbol
Min
Max Unit
1
Human body model (HBM)
VHBM
± 2000
—
V
2
Machine model (MM)
VMM
± 200
—
V
3
Charge device model (CDM)
VCDM
± 500
—
V
4
Latch-up current at TA = 85°C
ILAT
± 100
—
mA
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
A.5 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
MC9S08QD4 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor
177