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33912 Datasheet, PDF (13/47 Pages) Freescale Semiconductor, Inc – LIN System Basis Chip with DC Motor Pre-driver and Current | |||
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5V ⤠VSUP ⤠18V, -40°C ⤠TA ⤠125°C for the 33912 and -40°C ⤠TA ⤠85°C for the
34912, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
LIN PHYSICAL LAYER, TRANSCEIVER (LIN)(39)
Symbol
Min
Typ
Max
Unit
Output Current Limitation
Dominant State, VBUS = 18V
IBUSLIM
mA
40
120
200
Leakage Output Current to GND
Dominant State; VBUS = 0V; VBAT = 12V
IBUS_PAS_dom
-1.0
â
â
mA
Recessive State; 8V < VBAT < 18V; 8V < VBUS < 18V; VBUS ⥠VBAT IBUS_PAS_REC
â
â
20
µA
GND Disconnected; GNDDEVICE = VSUP; VBAT = 12V; 0 < VBUS < 18V IBUS_NO_GND
-1.0
â
1.0
mA
VBAT Disconnected; VSUP_DEVICE = GND; 0 < VBUS < 18V
IBUS
â
â
100
µA
Receiver Input Voltages
Receiver Dominant State
Receiver Recessive State
Receiver Threshold Center (VTH_DOM + VTH_REC)/2
Receiver Threshold Hysteresis (VTH_REC - VTH_DOM)
VBUSDOM
â
VSUP
â
0.4
VBUSREC
0.6
â
â
VBUS_CNT
0.475
0.5
0.525
VHYS
â
â
0.175
LIN Transceiver Output Voltage
V
Recessive State, TXD HIGH, IOUT = 1.0µA
VLIN_REC
VSUP -1.0
â
â
Dominant State, TXD LOW, 500⦠External Pull-up Resistor, LDVS = 0 VLIN_DOM_0
â
1.1
1.4
Dominant State, TXD LOW, 500⦠External Pull-up Resistor, LDVS = 1 VLIN_DOM_1
â
1.7
2
LIN Pull-up Resistor to VSUP
Over-temperature Shutdown(40)
Over-temperature Shutdown Hysteresis
RSLAVE
20
30
60
kâ¦
TLINSD
150
165
180
°C
TLINSD_HYS
â
10
â
°C
Notes
39. Parameters guaranteed for 7.0V ⤠VSUP ⤠18V.
40. When over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR is set.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33912
13
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