MC9RS08KA2 Datasheet, PDF (118/132 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
Table A-9. FLASH Characteristics
Characteristic
Symbol
Min
Typical¹
Max
Unit
Supply voltage for program/erase
V_DD
2.7
—
5.5
V
Program/Erase voltage
V_PP
11.8
12
12.2
V
V_PP current
Program
Mass erase
I_{VPP_prog}
—
I_{VPP_erase}
—
—
200
µA
—
100
µA
Supply voltage for read operation
0 < f_Bus < 10 MHz
V_Read
1.8
—
5.5
V
Byte program time
t_prog
20
—
40
µs
Mass erase time
Cumulative program HV time²
t_me
500
—
—
ms
t_hv
—
—
8
ms
Total cumulative HV time
(total of t_me & t_hv applied to device)
t_{hv_total}
—
—
2
hours
HVEN to program setup time
t_pgs
10
—
—
µs
PGM/MASS to HVEN setup time
t_nvs
5
—
—
µs
HVEN hold time for PGM
t_nvh
5
—
—
µs
HVEN hold time for MASS
t_nvh1
100
—
—
µs
V_PP to PGM/MASS setup time
t_vps
20
—
—
ns
HVEN to V_PP hold time
V_PP rise time³
t_vph
20
—
—
ns
t_vrs
200
—
—
ns
Recovery time
t_rcv
1
—
—
µs
Program/erase endurance
T_L to T_H = –40°C to + 85°C
1000
—
—
cycles
Data retention
t_{D_ret}
15
100
—
years
1 _{Typicals are measured at 25°C.}
2 _{thv is the cumulative high voltage programming time to the same row before next erase. Same address can not}
be programmed more than twice before next erase.
3 _{Fast VPP rise time may potentially trigger the ESD protection structure, which may result in over current flowing}
into the pad and cause permanent damage to the pad. External filtering for the V_PP power source is
recommended. An example VPP filter is shown in Figure A-3.
MC9RS08KA2 Series Data Sheet, Rev. 2
118
Freescale Semiconductor