MC9RS08KA2 Datasheet, PDF (109/132 Pages) Freescale Semiconductor, Inc – Microcontrollers

Appendix A Electrical Characteristics
P_D = K ÷ (T_J + 273°C)
Solving Equation A-1 and Equation A-2 for K gives:
Eqn. A-2
K = P_D × (T_A + 273°C) + θ_JA × (P_D)²
Eqn. A-3
where K is a constant pertaining to the particular part. K can be determined from Equation A-3 by
measuring P_D (at equilibrium) for a known T_A. Using this value of K, the values of P_D and T_J can be
obtained by solving equations 1 and 2 iteratively for any value of T_A.
A.4 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
Table A-3. ESD Protection Characteristics
Parameter
ESD Target for Machine Model (MM)
MM circuit description
ESD Target for Human Body Model (HBM)
HBM circuit description
Symbol
V_THMM
V_THHBM
Value
200
2000
Unit
V
V
A.5 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-4. DC Characteristics
(Temperature Range = –40 to 85°C Ambient)
Parameter
Supply voltage (run, wait and stop modes.)
0 < f_Bus <10MHz
Minimum RAM retention supply voltage applied to V_DD
Low-voltage Detection threshold
(V_DD falling)
(V_DD rising)
Power on RESET (POR) voltage
Input high voltage (VDD > 2.3V) (all digital inputs)
Input high voltage (1.8 V ≤ V_DD ≤ 2.3 V) (all digital inputs)
Symbol
V_DD
V_RAM
V_LVD
V_POR
V_IH
V_IH
Min
1.8
0.8 ¹
1.80
1.88
0.9
0.70 × V_DD
0.85 × V_DD
Typical
1.86
1.94
1.4
Max
Unit
V
5.5
—
V
V
1.95
2.03
1.7
V
—
V
—
V
MC9RS08KA2 Series Data Sheet, Rev. 2
Freescale Semiconductor
109