LM3S1620 Datasheet, PDF (452/485 Pages) List of Unclassifed Manufacturers – Microcontroller

Electrical Characteristics
21.1.3
21.1.4
21.1.5
Parameter Parameter Name
Min
I_OL Low-level sink current, V_OL=0.4 V
2-mA Drive 2.0
4-mA Drive 4.0
8-mA Drive 8.0
Nom
-
-
-
Max Unit
- mA
- mA
- mA
On-Chip Low Drop-Out (LDO) Regulator Characteristics
Table 21-3. LDO Regulator Characteristics
Parameter Parameter Name
Min Nom Max Unit
V_LDOOUT Programmable internal (logic) power supply output value 2.25 2.5 2.75 V
Output voltage accuracy
- 2% - %
t_PON
t_ON
t_OFF
V_STEP
C_LDO
Power-on time
Time on
Time off
Step programming incremental voltage
External filter capacitor size for internal power supply
- - 100 µs
- - 200 µs
- - 100 µs
- 50 - mV
1.0 - 3.0 µF
Power Specifications
The power measurements specified in the tables that follow are run on the core processor using
SRAM with the following specifications (except as noted):
■ V_DD = 3.3 V
■ V_DD25 = 2.50 V
■ V_BAT = 3.0 V
■ V_DDA = 3.3 V
■ Temperature = 25°C
■ Clock Source (MOSC) =3.579545 MHz Crystal Oscillator
■ Main oscillator (MOSC) = enabled
■ Internal oscillator (IOSC) = disabled
Flash Memory Characteristics
Table 21-4. Flash Memory Characteristics
Parameter Parameter Name
Min Nom Max Unit
PE_CYC Number of guaranteed program/erase cycles before failure^a 10,000 100,000 - cycles
T_RET Data retention at average operating temperature of 85˚C
10
-
- years
T_PROG Word program time
20
-
- µs
T_ERASE Page erase time
20
-
- ms
T_ME Mass erase time
200
-
- ms
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
452
September 02, 2007
Preliminary