M14D2561616A Datasheet, PDF (9/59 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks DDR II SDRAM

ESMT
M14D2561616A
AC Overshoot / Undershoot Specification
Parameter
Pin
Address, CKE, CS , RAS , CAS , WE ,
Maximum peak amplitude allowed for overshoot
ODT, CLK, CLK , DQ, DQS,
, DM
Address, CKE, CS , RAS , CAS , WE ,
Maximum peak amplitude allowed for undershoot
ODT, CLK, CLK , DQ, DQS,
, DM
Maximum overshoot area above V_DD
Address, CKE, CS , RAS , CAS , WE ,
ODT,
CLK, CLK , DQ, DQS,
, DM
Maximum undershoot area below V_SS
Address, CKE, CS , RAS , CAS , WE ,
ODT,
CLK, CLK , DQ, DQS,
, DM
Value
Unit
-2.5
-3
0.5
V
0.5
V
0.66
0.8 V-ns
0.23
V-ns
0.66
0.8 V-ns
0.23
V-ns
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
9/59