M14D2561616A Datasheet, PDF (15/59 Pages) Elite Semiconductor Memory Technology Inc. – 4M x 16 Bit x 4 Banks DDR II SDRAM

ESMT
M14D2561616A
ODT DC Electrical Characteristics
Parameter
Rtt effective impedance value for 75Ω setting
EMRS(1) [A6, A2] = 0, 1
Rtt effective impedance value for 150Ω setting
EMRS(1) [A6, A2) = 1, 0
Rtt effective impedance value for 50Ω setting
EMRS(1) [A6, A2] = 1, 1
Deviation of VM with respect to V_DDQ /2
Symbol
Min.
Typ.
Max.
Unit
Rtt1(eff)
60
75
90
Ω
Rtt2(eff)
120
150
180
Ω
Rtt3(eff)
40
50
60
Ω
△VM
-6
-
+6
%
Note:
Measurement Definition for Rtt(eff) :
Rtt(eff) is determined by separately applying VIH(AC) and VIL(AC) to test pin, and then measuring current I(VIH(AC)) and
I(VIL(AC)) respectively.
Measurement Definition for △VM :
Measure voltage (VM) at test pin with no load.
OCD Default Characteristics
Parameter
Min.
Typ.
Max.
Unit Note
Output impedance
12.6
18
23.4
Ω
1
Pull-up and pull-down mismatch
0
-
4
Ω
1,2,3
Output slew rate
1.5
-
5
V/ns ^1,4,5
Note:
1. Absolute specifications: the operation range of Voltage and Temperature.
2. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1,420mV; (VOUT - VDDQ)/IOH
must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ - 280mV.
Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than
23.4Ω for values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-down; both are measured at same temperature and voltage.
4. Slew rate measured from VIL (AC) to VIH (AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured
from AC to AC.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
15/59