M12L64322A_07 Datasheet, PDF (7/47 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Synchronous DRAM

ESMT
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V ，TA = 0 to 70 °C )
Parameter
Input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall-time
Output timing measurement reference level
Output load condition
Value
2.4/0.4
1.4
tr/tf = 1/1
1.4
See Fig. 2
M12L64322A
Unit
V
V
ns
V
Output
870 _Ω
3.3V
1200 _Ω
VOH (DC) =2.4V , IOH = -2 mA
30pF
VOL (DC) =0.4V , IOL = 2 mA
Output
Z0 =50 _Ω
Vtt = 1.4V
50 _Ω
30pF
(Fig. 1) DC Output Load Circuit
(Fig. 2) AC Output Load Circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
Row cycle time @ Operating
Last data in to col. address delay
Last data in to row precharge
Last data in to burst stop
tRRD(min)
tRCD(min)
tRP(min)
tRAS(min)
tRAS(max)
tRC(min)
tCDL(min)
tRDL(min)
tBDL(min)
Version
-5
-6
-7
10
12
14
15
18
20
15
18
20
40
42
42
100
55
60
63
1
2
1
Unit
ns
ns
ns
ns
us
ns
CLK
CLK
CLK
Note
1
1
1
1
1
2
2
2
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision: 2.3
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