English
Language : 

M12L64322A_07 Datasheet, PDF (1/47 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Synchronous DRAM
ESMT
Revision History
Revision 0.1(Dec. 28 1998)
-Original
Revision 0.2(Jan. 29 1999)
-Add page 45 "Packing Dimension"
Revision 0.3(Apr. 20 2000)
-Modify 6 tss from 2 to 1.5ns.(Page 7)
Revision 0.4(May. 09 2001)
- 64ms refresh period (4K cycle) --> 15.6μs refresh interval (P.1)
- Add Packing Dimension Title 86-LEAD TSOP(II) DRAM(400mil).
- Modify P.39
Revision 1.0(Jun. 08 2001)
- Modify ICC2NS, ICC6, tRDL, tOH spec
Revision 1.1(Oct. 21 2002)
- Add –5 spec, Delete -8 spec
Revision 1.2(Nov. 11 2002)
- Modify tCH, tCL spec
Revision 1.3(Dec. 24 2002)
- Delete -5 spec (AC/DC)
Revision 1.4(Jan. 17 2003)
- Modify tRDL to meet currently spec in the market
Revision 1.5(Feb. 17 2003)
- Typing error
Revision 1.6(Oct. 29 2003)
- Modify refresh period.
Revision 1.7(May. 10 2004)
- M12L64322A-6T tRDL=12ns
- M12L64322A-7T tRDL=14ns
Revision 1.8(May. 02 2005)
- Add pb-free to ordering information
- Recommend to add 4096 auto refresh before and after self refresh
Revision 1.9(Nov. 04 2005)
- Modify tCC / tRCD spec
Revision 2.0(Dec. 08 2005)
- Add –5T speed grade
Revision 2.1(Mar. 08 2006)
- Modify Inch Dimension Max. A2 from 0.011 to 0.041
Revision 2.2(Nov. 27 2006)
- Add BGA 90ball 8x13mm package
Revision 2.3(Mar. 02 2007)
- Delete BGA ball name of packing dimensions
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision: 2.3
1/47